丁召师长教员小我简介
发布时间: 2014-08-11 浏览次数: 3185

 

姓名:丁召

任务单位:贵州大年夜学理学院 电子迷信系

地址: 贵州省贵阳市花溪区 贵州大年夜学北区

邮编: 550025

研究范围:

研究砷化镓外面描写关于极化自旋的电子注入效力的影响;

研究磷化铟外面各类重构相;

以二维艾辛模型为指导,研究砷化镓(001)外面自发构成的岛状构造在均衡态下随砷蒸汽压力和温度的演变;研究砷化镓(001)外面自发构成的岛状构造产生过程的静态演变;

在原子标准上不雅察由温度和砷蒸汽压力驱动的砷化镓(001)外面预粗化和粗化过程;

研究砷化镓(001)外面镓原子的外面分散;

研究砷化镓(001)外面自发构成的岛状构造的微不雅构造;

参与构建了分子束内涵发展设备与扫描地道显微镜结合体系。处理了体系结合中的兼容成绩

参与构建了霍耳效应丈量体系,丈量分子束发展样品的输运特点

参与构建了霍耳效应丈量体系,研究氧原子在硅晶片中因热处理而构成的新热檀越

研究铟镓砷在砷化镓外面的发展,粗糙化的静态及静态过程。


学历:

University of Arkansas

Fayetteville, Arkansas

U. S. A.

物理学博士, 19988月-20028

导师:Paul M. Thibado

University of Arkansas

Fayetteville, Arkansas

U. S. A.

应用物理硕士,19988月-20015

导师:Paul M. Thibado

武汉大年夜学

中国 武汉

物理学硕士, 19878月-19908

导师:熊传铭

武汉大年夜学

中国 武汉

理学士, 1981年代-19858

任务经历:

博士后研究助理:20028月-20058月,Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A.

指导传授:Paul M. Thibado

博士生:19988月-20028月,Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A.

指导传授:Paul M. Thibado

硕士生:19988月-20015月,Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A.

指导传授:Paul M. Thibado

拜访学者:19979月-19985月,Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A.

指导传授:Paul M. Thibado

硕士生:19878月-19908月,武汉大年夜学物理系

指导传授:熊传铭

教员:贵州大年夜学,1985年-1987

讲师:贵州大年夜学,1990年-1997

传授:贵州大年夜学,2003年-  


贵州省省管专家,2007

贵州大年夜学学迷信术带头人,2011

获奖:

半导体器件道理课程教授教化改革的商量与实际

贵州省第五届高等教导教授教化成果奖一等奖,傅兴华,丁召,杨建,罗援


研究项目:
1. 高精度低漂移集成电压基准源研究与试制,贵州省科技厅工业攻关项目,黔科合GY字[2008]3033, 项目经费 15万元。
2. InGaAs外面相变过程的MBE/STM研究,国度天然迷信基金,60866001,项目经费 31万元。
3. InGaAs外面粗糙化过程的研究,贵州省留学人员科技项目,黔人项目赞助,合同 (2007)03号, 项目经费 18万元。
4. GaAs外面相变过程的MBE/STM研究,贵州省科技厅基金,黔科合J字[2007]2176号,项目经费 3万元。
5. GaAs外面预粗糙化与粗糙化过程的研究,贵州省委组织部高层人才网job.vhao.net科研特助项目,TZJF-2006年10号,项目经费 5万元。
6. 间歇式源中断方法发展InGaAs量子点的外面描写研究,教导部博士点基金,20105201110003,项目经费 6万元。
7. 电子元器件产学研基地,贵州省教导厅,黔教合KY字【2012】029号,项目经费10万元。
发表文章:
1. 罗子江, 周勋, 王继红, 郭祥, 张毕禅, 周清, 刘珂, 丁召, InGaAs薄膜外面的粗糙化过程, 物理学报, Vol.62 36802 (2013). (SCI收录)
2. Luo Zi-Jiang, Zhou Xun, Wang Ji-Hong, Guo Xiang, Zhou Qing, Liu Ke, Hu Ming-Zhe, Ding Zhao, C(4×4) reconstruction on arsenic-rich GaAs(001) surface after phase transition, Advanced Materials Research,Vol.669 19-23 (2013), (EI收录)
3. 王继红,罗子江,周勋,张毕禅,郭祥, 丁召,InAs薄膜的MBE发展与STM外面描写及外面重构分析, 材料导报,Vol.27 90-92 (2013)
4. 王继红, 罗子江, 周勋, 郭祥, 周清, 刘珂, 丁召, MBE发展GaAs(001)薄膜外面的Ostwald熟化过程研究, 功能材料, Vol.44 847-853 (2013). (EI收录)
5. Liu Ke, Zhou Xun, Guo Xiang, Luo Zi-Jiang, Wang Ji-Hong, Hu Ming-Zhe, Ding Zhao, Ripening of single-layer InGaAs islands on GaAs(001), Chin. Phys. B, Vol.22 26801-026801 (2013). (SCI收录)
6. 周清,刘珂,罗子江,郭祥,周勋,丁召,MBE发展InGaAs/GaAs(001)多层矩阵式量子点, 功能材料, Vol.44 1128-1131 (2013). (EI收录)
7. Q. Zhou, Z. Luo, K. Liu, X. Guo, B. Zhang, X. Zhou, J. Wang, Z. Ding, Influence of GaAs(001) pregrowth surface morphology and reconstruction on the growth of InGaAs layers, Applied Surface Science, Vol.268 151-155 (2013). (SCI收录)
8. Zhou Xun(周勋), Luo Zi-Jiang(罗子江), Guo Xiang(郭祥),Zhang Bi-Chan(张毕禅), Shang Lin-Tao(尚林涛), Zhou Qing(周清),Deng Chao-Yong(邓朝勇), and Ding Zhao(丁召),Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns,Chin. Phys. B Vol. 21, 046103 (2012)。(SCI收录)
9. Zhang Bi-Chan(张毕禅), Zhou Xun(周勋),Luo Zi-Jiang(罗子江),Guo Xiang(郭祥), and Ding Zhao(丁召), Step instability of the In0.2Ga0.8As surface during annealing, Chin. Phys. B Vol. 21(4), 048101 (2012)。(SCI收录)
10. 尚林涛,罗子江,周 勋, 郭 祥,张毕禅,何 浩, 贺业全,丁 召, In0.14Ga0.86As/GaAs(4×3) 外面的RHEED及STM分析。真空迷信与技巧学报,Vol.32(3), 256 (2012)。(EI收录)
11. 尚林涛,罗子江,周勋,张毕禅,郭祥,丁召,InGaAs(001)外面金属化的改变,材料导报,Vol.26.No.6 101 2012,(EI收录)
12. 罗子江,周勋,贺业全,何浩,郭祥,张毕禅,邓朝勇,丁召,RHEED及时监控下MBE发展不合In组分的InGaAs薄膜,功能材料,Vol.42, 2107 (2011)。(EI收录)
13. 罗子江,周勋,杨再荣,贺业全,何浩,邓朝勇,丁召, InGaAs/GaAs异质薄膜的MBE发展研究,功能材料,Vol.42 846 (2011)。(EI收录)
14. 周勋,杨再荣,罗子江,贺业全,何浩,韦俊,邓朝勇,丁召,反射式高能电子衍射仪及时监控的分子束内涵发展GaAs晶体衬底温度校准及外面相变的研究,物理学报,Vol. 60 016109 (2011)。(SCI收录)
15. 郭祥,罗子江,张毕禅,尚林涛,周勋,邓朝勇,丁召,一种测定GaAs上InAs发展速度的办法。物理实验,Vol.31(No.1) 11 (2011)。(核心期刊)
16. 何浩,贺业全,杨再荣,罗子江,周勋,丁召,自组织InAs/GaAs与InGaAs/GaAs量子点发展及退火情况的比较,真空,Vol.48 82 (2011)。(核心期刊)
17. 罗子江,周勋,杨再荣,贺业全,何浩,邓朝勇,丁召,在RHEED及时监控下GaAs晶体发展研究,功能材料 Vol. 41 704 (2010)。(EI收录)
18. 贺业全,罗子江,杨再荣,何浩,邓朝勇,周勋,丁召,不合Ⅴ/Ⅲ束流比对GaAs(001)面重构相的影响,真空,Vol. 47 70 (2010)。(核心期刊)
19. 杨发顺,林洁馨,马奎,丁召,傅兴华,汽车电压调理器集成电路芯片国土设计,半导体技巧,Vol. 34(9), 930 (2009)
20. 杨发顺,林洁馨,马奎,丁召,傅兴华,一种大年夜电流高精度集成汽车电压调理器,微电子学,Vol. 39(4),  491 (2009)
21. 马奎,丁召,吴宗桂,邓爱枝,傅兴华,高性能CMOS集成电压比较器设计,现代电子技巧,Vol. 32(14), 7 (2009)
22. 崔英善; 丁召; 张正平; 陆安江,砷化镓外面RHEED图谱的LabView设计,微计算机信息,Vol.25(9) 99 (2009)
23. 黄旭,潘金福,王云,周勋,丁召,MBE体系中GaAs样品的RHEED分析,现代机械,2009年第3期,第77页
24. 邓朝勇,周勋,马凯英,张正平,丁召,傅兴华,高浓度激活剂搀杂钡镁铝酸盐的发光特点研究,中国稀土学报,Vol. 27(2),194 (2009)
25. 周洪练,冯发文,任社华,丁召,R-500B型X线电机源主动调压电路的改进,中国医疗设备,Vol. 24(1),1 (2009)
26. 杨再荣,潘金福,周勋,王基石,宁江华,丁召,用于MBE中的反射式高能电子衍射仪,现代机械,2009年第1期,第57页
27. 王云,潘金福,黄旭,丁召,MBE体系中砷蒸气压的校准,中国科技信息,2008年第23期,第147页
28. 潘金福; 王云; 黄旭; 丁召,高温扫描地道显微镜(LT-STM)的调试技巧,真空,Vol.46(3) 57(2009) (核心期刊)
29. 潘金福,黄旭,王云,丁召,STM探针电化学腐化妆置的设计及实验研究,现代机械,2008年第5期,第14页
30. J. Yang, S. Wang, F.S. Yang, Z.P. Zhang, Z. Ding and X.H. Fu, In-situ growth of superconducting MgB2 thin films by HPCVD method at lower temperature,Physica C 467, 1 (2007)
31. J.F. Xu, P.M. Thibado, Z. Ding, 4 K, ultrahigh vacuum scanning tunneling microscope having two orthogonal tips with tunnel junctions as close as a few nanometers, Rev. Sci. Instrum. 77, 093703 (2006) (SCI收录)
32. V.P. LaBella, M.R. Krause, Z. Ding and P.M. Thibado, Arsenic-rich GaAs(001) Surface Structure, Surf. Sci. Rep. 60, 1 (2005) (SCI收录, 影响因子:17.857)
33. Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. LaBella, Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001), J. Vac. Sci. Technol. B 22, 2068 (2004). (SCI收录)
34. S. Vezian, F. Semond, J. Massies, D. W. Bullock, Z. Ding and P. M. Thibado, Origins of the GaN(0001) Surface Reconstructions, Surf. Sci. 541, 242 (2003). (SCI收录)
35. Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen, Time-evolution of the GaAs(001) pre-roughening process, Surf. Sci. 540, 491 (2003). (SCI 收录)
36. Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen, Atomic-Scale Observation of Temperature and Pressure Driven Preroughening and Roughenin, Phys. Rev. Lett. 90, 216109 (2003). (SCI收录, 影响因子: 7.489)
37. D. W. Bullock,Z. Ding, and P. M. Thibado, V. P. LaBella, Role of Aperiodic Surface Defects on the Intensity of Electron Diffraction Spots, Appl. Phys. Lett. 82, 2586 (2003). (SCI 收录, 影响因子: 4.127)
38. Z. Ding, D. W. Bullock, W. F. Oliver and P. M. Thibado, Dynamics of Spontaneous Roughening on the GaAs (001)-(2 x 4) Surface, J. Cryst. Growth 251, 35 (2003). (SCI收录)
39. D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado, Simultaneous Surface Topography and Spin-Injection Probability, J. Vac. Sci. Technol. B, 21, 67 (2002). (SCI 收录)
40. D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado, Mapping the Spin-Injection Probability on the Atomic Scale, J. Supercond. 15, 37 (2002). (SCI收录)
41. D. W. Bullock, V. P. Labella, T. Clingan, Z. Ding, G. Stewart, and P. M. Thibado, Enhancing the Student-Instructor Interaction Frequency, The Physics Teacher, 40, 535 (2002). (SCI 收录)
42. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery,and P. M. Thibado, Enabling Electron Diffraction as a Tool for Determining Substrate Temperature and Surface Morphology, App. Phys. Lett. 79, 3065 (2001) (SCI收录, 影响因子: 4.12)
43. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, M. Mortazavi, W. F. Oliver, G. J. Salamo, and P. M. Thibado, Spatially-Resolved Spin-Injection Probability for Gallium Arsenide, Science 292, 1518 (2001). (SCI收录, 影响因子: 30.927)
44. V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, A Union of the Real Space and Reciprocal Space view of the GaAs(001) Surface, Int. J. Mod. Phys. B 15, 2301 (2001). (SCI收录)
45. V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, Microscopic Structure of Spontaneously Formed Islands on the GaAs(001)-(2 x 4) Reconstructed Surface, J. Vac. Sci. Technol. B 19, 1640 (2001). (SCI收录)
46. V. P. LaBella, D. W. Bullock, Z. Ding and P. M. Thibado, P. Kratzer and M. Scheffler, A Novel STM Imaging Mechanism is Used to Determine the Atomic Structure of the GaAs(001)-(2 x 4) Surface, Omicron Newsletter 4, 4 (2000).
47. V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado,  Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstruction, J. Vac. Sci. Technol. A 18, 1492 (2000). (SCI收录)
48. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, and P. M. Thibado, Monte-Carlo Derived Diffusion Parameters for Ga on the GaAs(001)-(2 x 4) Surface: An MBE-STM Study, J. Vac. Sci. Technol. A 18, 1526 (2000). (SCI收录, 影响因子: 1.399, 援用次数: 12)
49. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, and P. M. Thibado, Microscopic View of a Two-Dimensional Lattice-Gas Ising System within the Grand Canonical Ensemble, Phys. Rev. Lett. 84, 4152 (2000). (SCI收录, 影响因子: 7.489)
50. H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers and P. M. Thibado, Activation Energy for Ga Diffusion on the GaAs(001)-(2 x 4) Surface: An MBE-STM Study, J. Cryst. Growth 201-202, 88 (1999). (SCI收录)
51. J. B. Smathers, D.W. Bullock, Z. Ding, G.J. Salamo and P.M. Thibado, Enabling In Situ Atomic-Scale Characterization of Epitaxial Surfaces and Interfaces, J. Vac. Sci. Technol. B 16, 3112 (1998). (SCI收录)
会议申报:
1. D. W. Bullock, V. P. LaBella, T. Clingan, Z. Ding, and P. M. Thibado, Hyper Interactive Teaching Methods Using Remote Control Technology, The 8th Hot Springs Educational Technology Institute Conference, June 13–14, 2001, Hot Springs, Arkansas.
2. C. Emery, D. W. Bullock, Z. Ding, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo, and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, The 85th Annual Meeting of the Arkansas Academy of Sciences, April 13–14, 2001, Conway, Arkansas.
3. D. W. Bullock, C. Emery, Z. Ding, V. P. LaBella, and P. M. Thibado, Hyper Interactive Teaching Methods Using Remote Control Technology, The 85th Annual Meeting of the Arkansas Academy of Sciences, April 13–14, 2001, Conway, Arkansas.
4. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, The Structure of Spontaneous Formed Islands on the GaAs(001)-(2 x 4) Reconstructed Surface, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 7–11, 2001, Lake Buena Vista, Florida.
5. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, W. F. Oliver, M. Mortazavi, G. Salamo and P. M. Thibado, Spatially-Resolved Spin-Injection Probabiliy for GaAs using a Half Metallic Ferromagnet, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 7–11, 2001, Lake Buena Vista, Florida.
6. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, The GaAs(001)-(2 x 4) Reconstructed Surface and the Ising Model, The 60th Annual Physical Electronics Conference, June 21–23, 2000, Baton Rouge, Louisiana.
7. D. W. Bullock, Z. Ding, C. Emery, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, 2000 Arkansas Space Grant Consortium Meeting, April 14, 2000, Russellville, Arkansas.
8. D. W. Bullock, Z. Ding, C. Emery, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, The 84th Annual Meeting of the Arkansas Academy of Sciences, April 7–8, 2000, Hot Springs, Arkansas.
9. D. W. Bullock, Z. Ding, C. Emery, M. Filipkowsi, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Simultaneous Topography and Electron Spin-Injection Probability Across a p-Type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, 27th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 16–20, 2000, Salt Lake City, Utah.
10. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, Spontaneous Island Formation on the GaAs(001)-(2 x 4) Reconstructed Surface, 27th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 16–20, 2000, Salt Lake City, Utah.
11. Z. Ding, V. P. LaBella, D. W. Bullock, P. M. Thibado, The Surface Reconstructions of InP(001), 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington.
12. P. M. Thibado, V. P. LaBella, M. Anser, Z. Ding, D. W. Bullock, Spontaneous Island Formation on the GaAs(001)( 2 x 4) Reconstructed Surface, 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington.
13. D.W. Bullock, V.P. LaBella, Z. Ding, and P.M. Thibado, The Effect of As4 Flux on the Ga Diffusion on the GaAs(001)-(2 x 4) Surface, 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington
14. Z. Ding, H. Yang, D. W. Bullock, P. Thibado, The Surface Reconstructions of InP, 1999 March Meeting of the American Physical Society, March 20–26, 1999, Atlanta Georgia.
15. P. M. Thibado, H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers,  In Situ Study of Ga Diffusion on the GaAs(001)-(2 x 4) Surface Reconstruction, 10 th International Conference on Molecular Beam Epitaxy, August 31 – September 4, 1998, Palais Des Festivals - Cannes, France.
16. Z. Ding, P. M. Thibado and V. P. Labella, E-beam evaporated cobalt films on MBE prepared GaAs(001) for spintronice, PCSI-31st Cneference on The Physics and Chemistry of Semiconductor Interfaces, January 18-22, 2004, Hawaii, U. S. A.
17. “超微粒SnO2薄膜的制备”,1991年全国薄膜迷信技巧年会,北京
18. “超微粒SnO2薄膜型高灵敏度氢气传感器”,1995年全国传感器学术年会,上海
特邀申报:
Z. Ding, Developing a Spin-Polarized Field-Effect Transistor and Measuring its Performance Characteristics, Nov. 5, 2004; Physics Department, University of Arkansas, Fayetteville, Arkansas, U. S. A.